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¿Qué es un diodo?

Todos los diodos con nomenclatura oficial americana empiezan por 1N y sigue luego un número. Algunas marcas utilizan un código propio como MUR (Motorola) SG (Silicon General).

Los europeos todos empiezan por BA los de baja señal y los de potencia por BY, siguen luego a veces otra letra y luego números. También en algunos casos al final va un guión (o una barra) que indica la tensión máxima que pueden soportar.

Los japoneses suelen empezar por SB. De los chinos ni se sabe...

Saludos.

European Semiconductor Numbering System

BFR90

|| | Third, Fourth, Fith Character(Serial Code)

|| Y## Industrial service (No letter Z)

|| ## is a W## Registration number from 10_99

|| 100- Device for consumer or entertainment

|| 999 use.

||

||

First letter---||----Second Leter(Type)]

(Material)

A Germanium A Low Power diode,

voltage-variable capacitor

B Silicon B Varicap

C Compound Materials C Small-signal audio transistor

such as cadmium

sulfide or gallium

arsenide used in

semiconductor devices.

(energy gap band of

1.3 or more eV.)

D Materials with an D Audio power transistor

energy gap of less

than 0.6 eV such as

Indium antimonide.

R Radiation detectors, E tunnel diode

photo-conductive cells,

Hall-effect generators

and so on

F Small-signal RF transistor

G Miscellaneous

H Field Probe

K Hall Generator

L RF-Power transistor

M Hall modulators and multipliers

P Photo diode, photo-resistor

,photo-conductive cell(LDR),

Radiation device.

R Low-power controlled rectifier

S Low-power switching transistor

T Breakdown devices,high-power

controlled rectifier,Schottky

diode, Thyristor,pnpn diodes.

U High-powered switching transistor

X Multiplier diode

Y High-power rectifier(diode)

Z Zener diode

Japanese Nomenclature

i ii iii iv v

2 S C 82D A

i) Kind of device, indicating the number of effective

electrical connections minus one.

ii) For a semiconductor registered with the EIAJ this

letter is always an S.

iii) Third letter designates the polarity and application, as follows:

A PNP transistor, high-frequency

B PNP transistor, low-frequency

C NPN transistor, high-frequency

D NPN transistor, low-frequency

E P-gate thyristor

F N-gate thyristor

H N-base unijunction transistor

J P-channel FET

K N-channel FET

M Bi-directional triode thyristor

iv) These figures designate the order of application

for EIAj registration, starting with 11.

v) This letter indicates the level of improvement.

An improved device may be used in place of

a previous-generation device , but not necessarily

the other way around.

Diez puntitos :-)